Symposium Sessions

QN03.06.29 : Annealing Effects on Direct Bandgap Emission from Atomically Thin MoS2 via Nb Ion Implantation

5:00 PM–7:00 PM Apr 23, 2019 (US - Arizona)

PCC North, 300 Level, Exhibit Hall C-E

Gourav Bhowmik2 1 Mengbing Huang1

2, University at Albany, State University of New York, Albany, New York, United States
1, Colleges of Nanoscale Science and Engineering, SUNY Polytechnic Institute, Albany, New York, United States

The emergence of 2D materials has led to increased attention on correlating the structural, optical, and optoelectronic properties of atomically thin transition metal chalcogenides like MoS2. We demonstrate the tunability of the photoluminescence (PL) properties of bulk MoS2 via implantation of Nb ions. Raman spectroscopy is used to confirm the p-type doping. The PL intensity of MoS2 is drastically enhanced by the adsorption of p-type dopants. X-ray photoelectron spectroscopy (XPS) is used to study the change of MoS2 structure after annealing in oxygen. We also demonstrate a stronger PL enhancement through defect engineering and oxygen bonding realized by oxygen anneal. Our results provide a new route for modulating the optical properties of two-dimensional semiconductors. The strong and stable PL from defects sites of MoS2 may have promising applications in optoelectronic devices.