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Symposium Sessions

QN04.04.12 : Thermal Conductivity of Cu3Sn

5:00 PM–7:00 PM Apr 23, 2019 (US - Arizona)

PCC North, 300 Level, Exhibit Hall C-E

Description
Matthias Daeumer1 Arad Azizi1 Sitaram Panta2 Faramarz Hadian2 Eric Cotts2 Scott Schiffres1

1, Mechanical Engineering, Binghamton University, Bing, New York, United States
2, Department of Physics, Binghamton University, The State University of New York, Binghamton, New York, United States

In order to realize vertical integration for next generation electronics packaging, purely intermetallic bonding is a promising contender to replace solder. The thermal properties of these industrially important intermetallics are relatively unstudied and poorly understood. Due to their high melting temperatures intermetallic bonds provide stability through several reflows enabling vertical packaging. However, in vertical packaging the interconnects must carry a significant portion of the heat away from the chip. In an effort to better understand the thermal capability of fully intermetallic bonding Frequency Domain Frequency Domain Thermoreflectance mapping was used to determine thermal conductivity of the arc-melted Cu3Sn with respect to crystallographic orientation. This will be complemented by electron backscatter diffraction mapping of the crystal orientation.

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