Nucleation and growth of oxygen precipitates in Czochralski Si crystals with different boron dopings has been investigated in-situ up to 1000°C to monitor their structural evolution from the very early stages to a stable configuration.
Thickness-dependent Pendellösung oscillations as described by the dynamical theory of X-ray diffraction are extremely sensitive to strain fields from defects in a host crystal. Based on this, we initiated a novel approach to study the precipitation kinetics of oxygen in Si. A diffusion-limited model of growing spherical precipitates with two growth regimes interprets the data. An initial diffusion-driven progression is followed by a long time precipitation behavior, which is interpreted as Ostwald ripening.