Symposium Sessions

EP09.03.01 : MEMS Process and Characterization for Strain-Engineered 2D Materials

5:00 PM–7:00 PM Apr 23, 2019 (US - Arizona)

PCC North, 300 Level, Exhibit Hall C-E

Edgar Acosta1 Mariana Martinez1 Aldo Vidaña1 Sergio Almeida2 Jose Mireles3 David Zubia1

1, University of Texas at El Paso, El Paso, Texas, United States
2, Electrical Engineer and Computer Science, University of California, Berkeley, Berkeley, California, United States
3, Universidad Autónoma de Ciudad Juárez, Ciudad Juarez, Chihuahua, Mexico

In recent years, an incredible increase in the number of transistors per chip has been observed, which has led to an increasing demand for more power efficient electronics. Additionally, recent studies of two layered materials such as graphene and some transition-metal dichalcogenides (TMDs) have shown strong potential for future use in electronics. One useful property of TMDs is that their electrical and optical properties are highly sensitive to strain. Furthermore, Micro-Electro-Mechanical System (MEMS) can be designed to provide a high level of stress. A low-power switch was recently proposed using a MEMS actuator to strain a MoS2 bilayer with switching energies as low as E = 1.0733 aJ [1].
In this work, we present the design and fabrication process of a MEMS-TMD switch designed to provide strain up to 6%. A comb-drive architecture is used for the MEMS actuator. A fabrication process for the MEMS is developed using SiGe technology. Finally, a process to transfer and clamp the TMD onto the MEMS is presented.

[1]A. Vidana et al., (2018) "Conductivity Modulation in Strained Transition-Metal-Dichalcogenides via Micro-Electro-Mechanical Actuation", Manuscript submitted for publication.