Two-dimensional transition metal dichalcogenides (TMDs) have attracted researchers for their broad application in semiconductor industry. As their controllable band gap, electronic characteristic and unique optical characteristic are suitable to fabricate electric device such as field-effect transistor. Here we show a synthesis method to control the quality of the bulk MoSe2 using chemical vapor deposition. Argon and hydrogen are the most popular carrier gas and reducing gas, respectively. The ratio of Ar and H2 determines the quality of the MoSe2. Furthemore, the crystallinity increased with increasing gas flow rate. To investigate the quality and uniformity of the bulk MoSe2, Raman spectroscopy, scanning electron microscope, energy dispersive analysis of X-ray, and X-ray photoelectron spectroscopy were performed. MoSe2 thin film transistor was then fabricated with typical bottom gate sturucture on a SiO2/Si substrate with Al2O3 passivation. The room-temperature carrier mobility for the device was about 21 cm2/Vs. This study demonstrates the novel approach in growth MoSe2 with high crystallinity and its application to electronic devices.
5:00 PM–7:00 PM Apr 24, 2019 (US - Arizona)
PCC North, 300 Level, Exhibit Hall C-E