Optically transparent p-type conductors enable development of transparent electronics, and opportunities to develop high-efficiency bifacial photovoltaic devices. Sulfide materials offer an interesting alternative to oxides for the photovoltaic applications due to better hole transport properties. We report on the structural, optical, and electronic properties of earth-abundant p-type transparent conducting barium copper sulfide (BCS) thin films fabricated using solution-processing. The BCS thin films were characterized using scanning electron microscopy (SEM), X-ray diffraction (XRD), UV–Vis–NIR spectroscopy, and spectroscopic ellipsometry (SE). A BCS film of thickness 100 nm can transmit > 70% of the visible light with band gap ∼ 2.4 eV. Based on SEM images, initial BCS films look compact with a grain size of ∼15 nm. Our studies show that these films are conductive with a carrier concentration of ∼1019 cm-3, making them promising hole transport materials for photovoltaic applications. We will discuss cadmium telluride (CdTe) devices fabricated using BCS layer as an interfacial layer between CdTe and a standard Cu/Au. Additionally, we will extend our study to fabricate bifacial CdTe devices employing the transparent BCS buffer layer and a conducting oxide as the back contact.