Hybrid organic-inorganic semiconducting interfaces have attracted attention in photodiodes and field-effect transistors (FETs) due to the realization of intrinsic p-n junctions and their mechanical flexibility. Organic copolymers based on diketopyrrolopyrrole (DPP) cores have also gained significant interest for application in FETs because of their high p-type carrier mobilities as well as high power conversion efficiencies in solar cell structures. In addition, grazing-incidence x-ray diffraction (GIXRD) reveals crystalline stability of phenyl-capped DPP-based monomers . With the difficulty of developing high-mobility n-type organic semiconductors due to the necessity of low LUMO levels and ambient environment stability, solution processable inorganic materials are an excellent alternative. ZnO is an intrinsic n-type semiconductor which is non-toxic and sol-gel processable, creating avenues for film patterning  and fully solution processed devices. These ZnO films are also able to be easily treated, reducing lattice defects through UV-Ozone processing. This decreases the dark current and increases responsivity in hybrid photodetectors and yields improved electrical performance in FETs. Additionally, cross-sectional electron microscopy techniques reveal hidden characteristics within the morphologies of the films and provide insight as to how processing conditions impact FET and photodiode operation.
We acknowledge the support of this work through the National Science Foundation under Grant No. ECCS- 1707588
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