Date/Time: 04-23-2019 - Tuesday - 05:00 PM - 07:00 PM
Ryan Duncan1 Giuseppe Romano1 Marianna Sledzinska2 Alexei Maznev1 Jean-Philippe Peraud3 Olle Hellman4 5 6 Clivia Sotomayor Torres2 Keith Nelson1

1, Massachusetts Institute of Technology, Cambridge, Massachusetts, United States
2, Catalan Institute of Nanoscience and Nanotechnology, Barcelona, , Spain
3, Lawrence Berkeley National Laboratory, Berkeley, California, United States
4, California Institute of Technology, Pasadena, California, United States
5, Linköping University, Linköping, , Sweden
6, Boston College, Chestnut Hill, Massachusetts, United States

In semiconductor nanostructures with feature sizes on the order of 100 nm, thermal transport is expected to be well-described by the phonon Boltzmann transport equation (BTE) with diffuse boundary scattering. However, over the past several years there have been reports of anomalously low effective thermal conductivity values in one- and two-dimensional semiconductor nanostructures. In this study, we investigate thermal transport in nanostructured holey silicon membranes using the non-contact optical transient thermal grating (TTG) technique. We compare the experimental results with two ab-initio BTE numerical techniques. We obtain excellent agreement between theory and experiment, indicating that semiclassical Boltzmann transport theory for phonons is adequate for describing room-temperature thermal transport in semiconductor nanostructures with feature sizes on the order of 100 nm.

Meeting Program

Symposium Sessions

5:00 PM–7:00 PM Apr 23, 2019 (US - Arizona)

PCC North, 300 Level, Exhibit Hall C-E