Gallium doped zinc oxide (GZO) and Aluminum doped zinc oxide (AZO) thin films were often grown on substrates such as glass, flexible polyethylene terephthalate substrate through using physical vapor deposition technique. The thin films were ultra-smooth in nature and showed outstanding optical, and electrical properties. Highly compact and dense PLD target was made in the laboratory fromAl2O3, Ga2O3 and ZnO powder in an appropriate proportion with a less than 10 atomic weight percentages of Ga and Al followed by isotactic press as well as high temperature annealing (1200 oC) for 12 hours. AZO thin films show stable and reproducible joule heating effect of more than 100oC by the application of low (<10 V) voltages. GZO transparent heater also showed a stable and reproducible Joule heating effect and the temperature can reach easily close to the 100oC by the application of low input 〈8V voltages. The samples showed low resistivity of about 2.6×10−4 Ω cm and 3.7×10−4Ω cm and also exhibited high optical transparency value in the visible region of the electromagnetic spectrum. The temperature dependent resistivity behavior of the films were investigated using four-point probe technique. This exciting results encourages the use of GZO and AZO transparent oxide in different optoelectronics device application.
5:00 PM–7:00 PM Apr 23, 2019 (US - Arizona)
PCC North, 300 Level, Exhibit Hall C-E