2019 MRS Spring Meeting - Tagged with Symposia>EP09: Devices And Materials To Extend The CMOS Roadmap For Logic And Memory Applications

PCC North, 300 Level, Exhibit Hall C-E

Date/Time: 04-23-2019 - Tuesday - 05:00 PM - 07:00 PM

EP09.03.02 : Application-Driven Perovskite Thin Films with Oxygen Vacancies Controlled

Pratheek Gopalakrishnan

PCC North, 300 Level, Exhibit Hall C-E

Date/Time: 04-23-2019 - Tuesday - 05:00 PM - 07:00 PM

EP09.03.03 : Single- and Double-Gate Synaptic Transistor with a TaOx Gate Insulator and an IGZO Semiconductor Channel Layer

Keonwon Beom

PCC North, 300 Level, Exhibit Hall C-E

Date/Time: 04-23-2019 - Tuesday - 05:00 PM - 07:00 PM

EP09.03.04 : Multiscale Modeling Framework for 2D-Material MOS Transistors

Madhuchhanda Brahma

PCC North, 300 Level, Exhibit Hall C-E

Date/Time: 04-23-2019 - Tuesday - 05:00 PM - 07:00 PM

EP09.03.05 : Suppression of Defects at High-K/SiGe Interface with Monolayer Si ALD Deposition

Harshil Kashyap

PCC North, 300 Level, Exhibit Hall C-E

Date/Time: 04-23-2019 - Tuesday - 05:00 PM - 07:00 PM

EP09.03.06 : Development of a Hierarchical Process for Optimization of the Design for MEMS Vibrating Ring Gyroscope for Miniaturized Space Attitude Control System

Daniel Choi

PCC North, 300 Level, Exhibit Hall C-E

Date/Time: 04-23-2019 - Tuesday - 05:00 PM - 07:00 PM

EP09.03.07 : Influence of Intermixing on Perpendicular Magnetic Anisotropy of Ion-Beam-Deposited CoFeB MTJs for STT-RAM

Tania Henry

PCC North, 300 Level, Exhibit Hall C-E

Date/Time: 04-23-2019 - Tuesday - 05:00 PM - 07:00 PM

EP09.03.08 : Role of Hypochlorous Acid in Solution-Processed P-Type Oxide Thin-Film Transistors for Oxide Semiconductor-Based CMOS Logic

Jusung Chung

PCC North, 300 Level, Exhibit Hall C-E

Date/Time: 04-23-2019 - Tuesday - 05:00 PM - 07:00 PM

EP09.03.09 : Ge2Se3/Ge2Se3-M (M = Sn, Al, Ti, W, Cr, Pb, Cu, C)-Based Optically-Gated Transistor—M Influence on Optical and Electrical Properties

Md Faisal Kabir

PCC North, 300 Level, Exhibit Hall C-E

Date/Time: 04-23-2019 - Tuesday - 05:00 PM - 07:00 PM

EP09.03.10 : MoTe2 p-n Junction Formed via Edge Contact and Oxidation

Changsik Kim

PCC North, 300 Level, Exhibit Hall C-E

Date/Time: 04-23-2019 - Tuesday - 05:00 PM - 07:00 PM

EP09.03.11 : Nonvolatile Capacitance Changes in Metal-Oxide-Semiconductor Device with Resistive Switching Floating-Gate Structure for Nonvolatile Memory and Programmable Logic Device Application

Minju Kim

PCC North, 300 Level, Exhibit Hall C-E

Date/Time: 04-23-2019 - Tuesday - 05:00 PM - 07:00 PM

EP09.03.14 : Influence of the Type of Chalcogen (Ch) Atom on the Electrical Properties of a Ge2Se3/Sn-Ch Memristive Device

Pradeep Kumar Kumaravadivel

PCC North, 300 Level, Exhibit Hall C-E

Date/Time: 04-23-2019 - Tuesday - 05:00 PM - 07:00 PM

EP09.03.15 : Enhancement of Electrical Properties for Black Phosphorus Using the via Contacts Embedded in h-BN

Myeongjin Lee

PCC North, 300 Level, Exhibit Hall C-E

Date/Time: 04-23-2019 - Tuesday - 05:00 PM - 07:00 PM

EP09.03.16 : Giant Electroresistance Effect in Single-Crystalline Lithium Niobate Thin Films Enabled by Domain Wall Control

Haidong Lu

PCC North, 300 Level, Exhibit Hall C-E

Date/Time: 04-23-2019 - Tuesday - 05:00 PM - 07:00 PM

EP09.03.17 : Transport Analysis of 4H-SiC Power Devices Using Full-Band Ensemble Monte Carlo Method

Chi-Yin Cheng

PCC North, 300 Level, Exhibit Hall C-E

Date/Time: 04-23-2019 - Tuesday - 05:00 PM - 07:00 PM

EP09.03.18 : Fabrication of Ferroelectric V-Doped ZnO Films Fabricated via Sol-Gel Method

Woo Jun Seol

PCC North, 300 Level, Exhibit Hall C-E

Date/Time: 04-23-2019 - Tuesday - 05:00 PM - 07:00 PM

EP09.03.19 : Manipulating the Electrochemical Metallization Cell Kinetics by the Anion Electrode and Tunable Electrolyte

Ziyang Zhang

PCC North, 300 Level, Exhibit Hall C-E

Date/Time: 04-23-2019 - Tuesday - 05:00 PM - 07:00 PM

EP09.03.20 : Bidirectional and Multilevel Threshold Switching of Ag-Dielectrics Diffusive Devices for Neuromorphic Computing Applications

Yaoyuan Wang

PCC North, 300 Level, Exhibit Hall C-E

Date/Time: 04-23-2019 - Tuesday - 05:00 PM - 07:00 PM

EP09.03.21 : Optoelectronic CMOS Transistors—Performance Advantages for Sub-7nm ULSI, RF ASIC, Memories and Power MOSFETs

James Pan

PCC North, 300 Level, Exhibit Hall C-E

Date/Time: 04-23-2019 - Tuesday - 05:00 PM - 07:00 PM

EP09.03.22 : Atomic Force High Frequency Phonons Nonvolatile Dynamic Random-Access Memory Compatible with Sub-7nm ULSI CMOS Technology

James Pan

PCC North, 300 Level, Exhibit Hall C-E